2GB Transcend DDR3 SO-DIMM 1066MHz (PC3-8500) laptop memory module (7-7-7)
Manufactured by:
This product has been discontinued
Product Information
Part Number: TS256MSK64V1U
Item No: 11202
Shipping Weight: 0.1 kgs (0.22 lbs)
Actual Weight: 0.02 kgs (0.03 lbs)
Specifications
CAPACITY
2GB
STANDARD
PC3-8500 (DDR3-1066)
MEMORY SPEED
1066MHz (DDR3-1066)
CAS LATENCY
CL7
SINGLE MODULE OR DUAL KIT
Single memory module
ERROR CHECKING
Non-ECC
REGISTERED
Unbuffered
VOLTAGE
1.5V
FORM FACTOR
204-Pin DDR3 SO-DIMM memory module
CONFIGURATION
Double-sided 2GB DDR3 SO-DIMM memory module, 128Mx8 chips
FEATURES
Suitable for Dual-Channel operation if purchased in pairs
PACKAGING
Retail packaging
WARRANTY
Lifetime warranty
Product Description
Single 2GB DDR3 laptop memory module, DDR3 SO-DIMM. Operating at 1066MHz this module is suitable for newer laptops with support for DDR3 memory. Also suitable for dual channel operation if purchased as a pair (ie. 2 x 2GB modules purchased in the same order).
The TS256MSK64V1U is a 256M x 64bits DDR3-1066 SO-DIMM. The TS256MSK64V1U consists of 16pcs 128Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS256MSK64V1U is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
The TS256MSK64V1U is a 256M x 64bits DDR3-1066 SO-DIMM. The TS256MSK64V1U consists of 16pcs 128Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS256MSK64V1U is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.