Specifications
CAPACITY
512MB
STANDARD
PC2100
SINGLE MODULE OR DUAL KIT
Single module
MEMORY SPEED
266MHz (DDR266)
CAS LATENCY
CL2.5
MEMORY TIMINGS
2.5-3-3
VOLTAGE
2.5V
ERROR CHECKING
non-ECC
REGISTERED
Unbuffered
TECHNOLOGY
184-pin DDR SDRAM
CONFIGURATION
32Mx8 chips (16 chips, double-sided)
PACKAGING
Retail packaging
WARRANTY
Lifetime warranty
Product Description
512Mb 266MHz DDR RAM memory module, DDR266 PC2100 rating. 184 pins, non-ECC, 2.5V, suitable for the majority of desktop computers designed for 266MHz memory. Double-sided with 16 chips, rated CL2.5-3-3. Lifetime warranty.
The DDR266 module for desktop is a double data rate module composed of CMOS Double Data Rate SDRAMs in TSOP-II 400mil 66pin package and one 2Kbit EEPROM in 8pin TSSOP(TSOP) package on a 184pin glass–epoxy printed circuit board.
DDR266 is a dual in-line memory module and is intended for mounting onto 184-pins edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features:
- DLL aligns DQ and DQS transition with CK transition
- Double-data-rate architecture
- Bi-directional data strobe (DQS)
- Differential clock inputs(CK and /CK)
- Auto refresh and self refresh
- 8192 refresh cycles / 64ms
- Power supply: VDD, VDDQ: 2.7V+/-0.1V
- Programmable Burst length (2,4,8)
- Serial Presence Detect with EEPROM
The DDR266 module for desktop is a double data rate module composed of CMOS Double Data Rate SDRAMs in TSOP-II 400mil 66pin package and one 2Kbit EEPROM in 8pin TSSOP(TSOP) package on a 184pin glass–epoxy printed circuit board.
DDR266 is a dual in-line memory module and is intended for mounting onto 184-pins edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features:
- DLL aligns DQ and DQS transition with CK transition
- Double-data-rate architecture
- Bi-directional data strobe (DQS)
- Differential clock inputs(CK and /CK)
- Auto refresh and self refresh
- 8192 refresh cycles / 64ms
- Power supply: VDD, VDDQ: 2.7V+/-0.1V
- Programmable Burst length (2,4,8)
- Serial Presence Detect with EEPROM