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6GB Transcend DDR3 1333MHz PC3-10666 CL9 Triple Channel memory kit
Manufactured by:
This product has been discontinued
Product Information
Part Number: TS1333KLU-6GK
Item No: 11353
Shipping Weight: 0.18 kgs (0.4 lbs)
Actual Weight: 0.18 kgs (0.4 lbs)
Specifications
CAPACITY
6GB
MEMORY SPEED
1333MHz (DDR3-1333)
STANDARD
PC3-10666
SINGLE MODULE OR DUAL KIT
Triple Channel kit (3x2GB)
CAS LATENCY
CL9
MEMORY TIMINGS
9-9-9
VOLTAGE
1.5V
ERROR CHECKING
Non-ECC
FEATURES
6-layer PCB
Three matched 2GB modules
Three matched 2GB modules
REGISTERED
Unbuffered
TECHNOLOGY
DDR3 SDRAM memory upgrade kit
CONFIGURATION
Double-sided 2GB DDR3 memory modules, 128Mx8 chip configuration
PACKAGING
Retail packaging
WARRANTY
Lifetime warranty
Product Description
6GB Triple Channel DDR3 memory upgrade kit, consisting of 3x2GB modules. This Transcend kit is ideal for mainstream computing systems, offering reliable performance at a very good price. Memory timings of CL9 (9-9-9) and backed by Transcends lifetime warranty.
The TS1333KLU-6GK, a triple channel kits, consists of 3pcs 2GB DDR3 SDRAM module. The 2GB module is a 256M x 64bits DDR3-1333 unbuffered DIMM. The 2GB module consists of 16pcs 128Mx8 bits DDR3 SDRAMs in 78 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The 2GB module is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
The TS1333KLU-6GK, a triple channel kits, consists of 3pcs 2GB DDR3 SDRAM module. The 2GB module is a 256M x 64bits DDR3-1333 unbuffered DIMM. The 2GB module consists of 16pcs 128Mx8 bits DDR3 SDRAMs in 78 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The 2GB module is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.